j. c/ .i.li lpioauati, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfm5p12, rfm5p15, RFP5P12, rfp5p15 p-channel enhancement-mode power field-effect transistors 5 a, 120v ? 150v featurer soa is power-dissipation limited nanosecond switching speeds linear transfer characteristics high input impedance majority carrier device p-channel enhancement mode terminal designations the rfmsp12 and rfm5p15 and the RFP5P12 and rfp5p15 ? are p-channel enhancement-mode silicon gate power field-effect transistors designed forhlgh-speed applications such as switching ragulators, switching converters, relay drivers, and drivers for high-power bipolar switching transistors. the rfm-series types are supplied in the jedec to- 204aa metal package and the rfp-serles types in the jedec to-220ab plastic package. all these types are supplied without an internal gate zener diode. rfm5p12 rfm5pi5 jedec to-204aa jedec to-220ab maximum ratings, absolute-maximum values (tc = 25c): rfm5p12 rfm5p15 drain-source voltage orain-qate voltage (r0, gate-source voltage drain current rms pulsed power dissipation @ tc = 25-c derate above tc = 25c operating and storage temperature t,. t,? RFP5P12 rfp5p1s (rgg ? 1 mil) voor -120 -150 pt -120 -150 0.6 0.6 60 0.48 60 0.46 . -55 to +150 - v v v a a w w/'c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfm5p12, rfm5p15, RFP5P12, rfp5p15 characteristic drain-source breakdown voltage gate-threshold voltage zero-gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse-transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal resistance junctlon-to-case symbol bvds8 vgshm loss loss vostonl roslon) g..' ci., co.. c? tdlonl t, tflwin it r?jc test conditions id = 1 ma vos = 0 vos = vos id = 1 ma vos = -100 v vds = -120 v tc=125c vds = -w>0 v vos = -120v vos = 20 v voa = 0 id = 2.5 a vos =-10 v lo = 5a vgs = -10 v id = 2,5 a vm = -10 v vos = 10 v lo = 2.5 a vos = 25 v vas = 0 v f = 1mhz vdd - 1/2 bvoss id = 2.5 a ra.n = rj, = 50fl vos = 10 v rfm5p12, rfm5p15 RFP5P12. rfp5p15 limits rfm5p12 RFP5P12 mln. -120 -2 : - - - - - 0.75 ? ? ? 20(typ.) 36(typ.) 63(typ.) 40(typ.l - - max. - -4 1 50 100 -2.5 -8 1 - 700 300 100 60 100 150 100 1.67 2.063 rfm5p15 rfp5p15 mln. -150 -2 ? - - - - - 0.75 ? ? ? 20(typ.) 36(typ.) 63(typ.) 40(typ.) - - max. - -4 1 50 100 -2.5 -8 1 - 700 300 100 60 100 150 100 1.67 2.083 units v v m na v n mho pf ns "c/w ?pulsed: pulse duration - 300 ais max., duty cycle - 2%. source-drain diode ratings and characteristics characteristic diode forward voltage reverse recovery time symbol vsd u test conditions iso = 2.5a u = 4a d,f/d, - 100a/?(s lin hfm5p12 rfpsp12 mln. - max. 1.4 300{typ.) ts rfmsp1s rfp5p15 min. ? max. 1.4 ' 300(typ.) units v ns ?pulse 1 a,'.; width < 300 jis, duty cycle < 2%.
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